产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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  • Diodes Incorporated - DCX123JU-7-F - TRANS NPN/PNP PREBIAS SOT363
  • Diodes Incorporated
    TRANS NPN/PNP PREBIAS SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

    型号:DCX123JU-7-F
    仓库库存编号:DCX123JU-FDICT-ND
    别名:DCX123JU-FDICT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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  • Toshiba Semiconductor and Storage - RN1907FE,LF(CB - TRANS 2NPN PREBIAS 0.1W ES6
  • Toshiba Semiconductor and Storage
    TRANS 2NPN PREBIAS 0.1W ES6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

    型号:RN1907FE,LF(CB
    仓库库存编号:RN1907FELF(CBCT-ND
    别名:RN1907FE(T5LFT)CT
    RN1907FE(T5LFT)CT-ND
    RN1907FELF(CBCT
    RN1907FELF(CTCT
    RN1907FELF(CTCT-ND

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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  • Toshiba Semiconductor and Storage - RN2906,LF - TRANS 2PNP PREBIAS 0.2W US6
  • Toshiba Semiconductor and Storage
    TRANS 2PNP PREBIAS 0.2W US6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

    型号:RN2906,LF
    仓库库存编号:RN2906LFCT-ND
    别名:RN2906LF(CTCT
    RN2906LF(CTCT-ND
    RN2906LFCT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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  • Diodes Incorporated - DCX143ZU-7-F - TRANS PREBIAS NPN/PNP SOT363
  • Diodes Incorporated
    TRANS PREBIAS NPN/PNP SOT363

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363

    型号:DCX143ZU-7-F
    仓库库存编号:DCX143ZU-7-FDICT-ND
    别名:DCX143ZU-7-FDICT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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  • Rohm Semiconductor - UMH10NTN - TRANS 2NPN PREBIAS 0.15W UMT6
  • Rohm Semiconductor
    TRANS 2NPN PREBIAS 0.15W UMT6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

    型号:UMH10NTN
    仓库库存编号:UMH10NTNCT-ND
    别名:UMH10NTNCT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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  • Rohm Semiconductor - UMG8NTR - TRANS 2NPN PREBIAS 0.15W UMT5
  • Rohm Semiconductor
    TRANS 2NPN PREBIAS 0.15W UMT5

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5

    型号:UMG8NTR
    仓库库存编号:UMG8NCT-ND
    别名:UMG8NCT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
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  • Rohm Semiconductor - UMA5NTR - TRANS PREBIAS DUAL PNP UMT5
  • Rohm Semiconductor
    TRANS PREBIAS DUAL PNP UMT5

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5

    型号:UMA5NTR
    仓库库存编号:UMA5NCT-ND
    别名:UMA5NCT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
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  • Rohm Semiconductor - UMB10NTN - TRANS PREBIAS DUAL PNP UMT6
  • Rohm Semiconductor
    TRANS PREBIAS DUAL PNP UMT6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

    型号:UMB10NTN
    仓库库存编号:UMB10NTNCT-ND
    别名:UMB10NTNCT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
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  • Rohm Semiconductor - EMG8T2R - TRANS 2NPN PREBIAS 0.15W EMT5
  • Rohm Semiconductor
    TRANS 2NPN PREBIAS 0.15W EMT5

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

    型号:EMG8T2R
    仓库库存编号:EMG8T2RCT-ND
    别名:EMG8T2RCT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
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  • Rohm Semiconductor - IMB10AT110 - TRANS PREBIAS DUAL PNP SMT6
  • Rohm Semiconductor
    TRANS PREBIAS DUAL PNP SMT6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

    型号:IMB10AT110
    仓库库存编号:IMB10AT110CT-ND
    别名:IMB10AT110CT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
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  • Toshiba Semiconductor and Storage - RN4907FE,LF(CB - TRANS NPN/PNP PREBIAS 0.1W ES6
  • Toshiba Semiconductor and Storage
    TRANS NPN/PNP PREBIAS 0.1W ES6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

    型号:RN4907FE,LF(CB
    仓库库存编号:RN4907FELF(CBCT-ND
    别名:RN4907FE(T5LFT)CT
    RN4907FE(T5LFT)CT-ND
    RN4907FELF(CBCT
    RN4907FELF(CTCT
    RN4907FELF(CTCT-ND

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
  • 搜索

  • Toshiba Semiconductor and Storage - RN2907FE,LF(CB - TRANS 2PNP PREBIAS 0.1W ES6
  • Toshiba Semiconductor and Storage
    TRANS 2PNP PREBIAS 0.1W ES6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

    型号:RN2907FE,LF(CB
    仓库库存编号:RN2907FELF(CBCT-ND
    别名:RN2907FE(T5LFT)CT
    RN2907FE(T5LFT)CT-ND
    RN2907FELF(CBCT
    RN2907FELF(CTCT
    RN2907FELF(CTCT-ND

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
  • 搜索

  • Toshiba Semiconductor and Storage - RN4904FE,LF(CB - TRANS NPN/PNP PREBIAS 0.1W ES6
  • Toshiba Semiconductor and Storage
    TRANS NPN/PNP PREBIAS 0.1W ES6

    详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

    型号:RN4904FE,LF(CB
    仓库库存编号:RN4904FELF(CBCT-ND
    别名:RN4904FE(T5LFT)CT
    RN4904FE(T5LFT)CT-ND
    RN4904FELF(CBCT
    RN4904FELF(CTCT
    RN4904FELF(CTCT-ND

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
  • 无铅
  • 搜索

  • Rohm Semiconductor - FMA5AT148 - TRANS PREBIAS DUAL PNP SMT5
  • Rohm Semiconductor
    TRANS PREBIAS DUAL PNP SMT5

    详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT5

    型号:FMA5AT148
    仓库库存编号:FMA5AT148CT-ND
    别名:FMA5AT148CT

    产品分类:晶体管 - 双极 (BJT) - 阵列 - 预偏置,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 80 @ 10mA,5V,
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