品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
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Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
型号:
RN4990(T5L,F,T)
仓库库存编号:
RN4990(T5LFT)CT-ND
别名:RN4990(T5LFT)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
型号:
RN4991(T5L,F,T)
仓库库存编号:
RN4991(T5LFT)CT-ND
别名:RN4991(T5LFT)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2711JE(TE85L,F)
仓库库存编号:
RN2711JE(TE85LF)CT-ND
别名:RN2711JE(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2712JE(TE85L,F)
仓库库存编号:
RN2712JE(TE85LF)CT-ND
别名:RN2712JE(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2713JE(TE85L,F)
仓库库存编号:
RN2713JE(TE85LF)CT-ND
别名:RN2713JE(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SMV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV
型号:
RN2510(TE85L,F)
仓库库存编号:
RN2510(TE85LF)CT-ND
别名:RN2510(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SMV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV
型号:
RN2511(TE85L,F)
仓库库存编号:
RN2511(TE85LF)CT-ND
别名:RN2511(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6
型号:
RN1611(TE85L,F)
仓库库存编号:
RN1611(TE85LF)CT-ND
别名:RN1611(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
型号:
RN1970(TE85L,F)
仓库库存编号:
RN1970(TE85LF)CT-ND
别名:RN1970(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 200mW Surface Mount US6
型号:
RN1973(TE85L,F)
仓库库存编号:
RN1973(TE85LF)CT-ND
别名:RN1973(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
型号:
RN2971(TE85L,F)
仓库库存编号:
RN2971(TE85LF)CT-ND
别名:RN2971(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
型号:
RN4610(TE85L,F)
仓库库存编号:
RN4610(TE85LF)CT-ND
别名:RN4610(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
型号:
RN4611(TE85L,F)
仓库库存编号:
RN4611(TE85LF)CT-ND
别名:RN4611(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.15W VESM
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
型号:
RN1110MFV,L3F
仓库库存编号:
RN1110MFVL3FCT-ND
别名:RN1110MFV(TL3T)CT
RN1110MFV(TL3T)CT-ND
RN1110MFVL3FCT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.15W VESM
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
型号:
RN1131MFV(TL3,T)
仓库库存编号:
RN1131MFV(TL3T)CT-ND
别名:RN1131MFV(TL3T)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.1W USM
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
型号:
RN1310(TE85L,F)
仓库库存编号:
RN1310(TE85LF)CT-ND
别名:RN1310(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 0.15W VESM
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
型号:
RN2119MFV(TPL3)
仓库库存编号:
RN2119MFV(TPL3)CT-ND
别名:RN2119MFV(TPL3)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 0.1W USM
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
型号:
RN2311(TE85L,F)
仓库库存编号:
RN2311(TE85LF)CT-ND
别名:RN2311(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.2W S-MINI
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini
型号:
RN1412TE85LF
仓库库存编号:
RN1412TE85LFCT-ND
别名:RN1412TE85LFCT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.1W CST3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
型号:
RN1110ACT(TPL3)
仓库库存编号:
RN1110ACT(TPL3)CT-ND
别名:RN1110ACT(TPL3)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.1W CST3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
型号:
RN1113ACT(TPL3)
仓库库存编号:
RN1113ACT(TPL3)CT-ND
别名:RN1113ACT(TPL3)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 0.1W CST3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
型号:
RN1112ACT(TPL3)
仓库库存编号:
RN1112ACT(TPL3)CT-ND
别名:RN1112ACT(TPL3)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
型号:
RN2911FE(TE85L,F)
仓库库存编号:
RN2911FE(TE85LF)CT-ND
别名:RN2911FE(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
型号:
RN1910FE(T5L,F,T)
仓库库存编号:
RN1910FE(T5LFT)CT-ND
别名:RN1910FE(T5LFT)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2710JE(TE85L,F)
仓库库存编号:
RN2710JE(TE85LF)CT-ND
别名:RN2710JE(TE85LF)CT
品牌:Toshiba Semiconductor and Storage,规格:不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值) 120 @ 1mA,5V,
无铅
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