品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
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Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 119F E6327
仓库库存编号:
BCR 119F E6327-ND
别名:BCR119FE6327XT
SP000014440
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSLP-3
型号:
BCR 119L3 E6327
仓库库存编号:
BCR 119L3 E6327-ND
别名:BCR119L3E6327XT
SP000014854
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SC-75
型号:
BCR 119T E6327
仓库库存编号:
BCR 119T E6327-ND
别名:BCR119TE6327XT
SP000014774
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SOT323-3
型号:
BCR119WE6327HTSA1
仓库库存编号:
BCR119WE6327HTSA1TR-NDTR-ND
别名:BCR 119W E6327
BCR 119W E6327-ND
BCR119WE6327
BCR119WE6327XT
SP000012267
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 129F E6327
仓库库存编号:
BCR 129F E6327-ND
别名:BCR129FE6327XT
SP000014441
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSLP-3
型号:
BCR 129L3 E6327
仓库库存编号:
BCR 129L3 E6327-ND
别名:BCR129L3E6327XT
SP000014855
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SC-75
型号:
BCR 129T E6327
仓库库存编号:
BCR 129T E6327-ND
别名:BCR129TE6327XT
SP000012800
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SOT323-3
型号:
BCR129WE6327HTSA1
仓库库存编号:
BCR129WE6327HTSA1TR-NDTR-ND
别名:BCR 129W E6327
BCR 129W E6327-ND
BCR129WE6327
BCR129WE6327XT
SP000014963
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 200mW Surface Mount PG-SOT23-3
型号:
BCR 133 B6327
仓库库存编号:
BCR 133 B6327-ND
别名:BCR133B6327XT
SP000056346
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 133F B6327
仓库库存编号:
BCR 133F B6327-ND
别名:BCR133FB6327XT
SP000014050
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 133F E6327
仓库库存编号:
BCR 133F E6327-ND
别名:BCR133FE6327XT
SP000014049
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-TSLP-3
型号:
BCR 133L3 E6327
仓库库存编号:
BCR 133L3 E6327-ND
别名:BCR133L3E6327XT
SP000013564
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-SC-75
型号:
BCR 133T E6327
仓库库存编号:
BCR 133T E6327-ND
别名:BCR133TE6327XT
SP000012801
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-SOT323-3
型号:
BCR133WE6327HTSA1
仓库库存编号:
BCR133WE6327HTSA1TR-NDTR-ND
别名:BCR 133W E6327
BCR 133W E6327-ND
BCR133WE6327
BCR133WE6327XT
SP000010764
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 200mW Surface Mount PG-SOT23-3
型号:
BCR 135 B6327
仓库库存编号:
BCR 135 B6327-ND
别名:BCR135B6327XT
SP000095915
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 135F E6327
仓库库存编号:
BCR 135F E6327-ND
别名:BCR135FE6327XT
SP000013048
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSLP-3
型号:
BCR 135L3 E6327
仓库库存编号:
BCR 135L3 E6327-ND
别名:BCR135L3E6327XT
SP000014856
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SC-75
型号:
BCR 135T E6327
仓库库存编号:
BCR 135T E6327-ND
别名:BCR135TE6327XT
SP000012802
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SOT323-3
型号:
BCR135WE6327BTSA1
仓库库存编号:
BCR135WE6327BTSA1TR-NDTR-ND
别名:BCR 135W E6327
BCR 135W E6327-ND
BCR135WE6327
BCR135WE6327XT
SP000010768
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 139F E6327
仓库库存编号:
BCR 139F E6327-ND
别名:BCR139FE6327XT
SP000014442
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-TSLP-3
型号:
BCR 139L3 E6327
仓库库存编号:
BCR 139L3 E6327-ND
别名:BCR139L3E6327XT
SP000014857
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 250mW Surface Mount PG-SC-75
型号:
BCR 139T E6327
仓库库存编号:
BCR 139T E6327-ND
别名:BCR139TE6327XT
SP000014763
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-TSFP-3
型号:
BCR 141F E6327
仓库库存编号:
BCR 141F E6327-ND
别名:BCR141FE6327XT
SP000013049
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW TSLP-3
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-TSLP-3
型号:
BCR 141L3 E6327
仓库库存编号:
BCR 141L3 E6327-ND
别名:BCR141L3E6327XT
SP000014858
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
搜索
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
详细描述:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-SC-75
型号:
BCR 141T E6327
仓库库存编号:
BCR 141T E6327-ND
别名:BCR141TE6327XT
SP000012803
品牌:Infineon Technologies,规格:Voltage - Collector Emitter Breakdown (Max) 50V,
无铅
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