规格:频率 - 跃迁 200MHz,
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在结果中搜索词:
以下搜索结果
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Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
型号:
RN2903FE(TE85L,F)
仓库库存编号:
RN2903FE(TE85LF)CT-ND
别名:RN2903FE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
型号:
RN2908FE(TE85L,F)
仓库库存编号:
RN2908FE(TE85LF)CT-ND
别名:RN2908FE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
型号:
RN2909FE(TE85L,F)
仓库库存编号:
RN2909FE(TE85LF)CT-ND
别名:RN2909FE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2709JE(TE85L,F)
仓库库存编号:
RN2709JE(TE85LF)CT-ND
别名:RN2709JE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2711JE(TE85L,F)
仓库库存编号:
RN2711JE(TE85LF)CT-ND
别名:RN2711JE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2712JE(TE85L,F)
仓库库存编号:
RN2712JE(TE85LF)CT-ND
别名:RN2712JE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
型号:
RN2713JE(TE85L,F)
仓库库存编号:
RN2713JE(TE85LF)CT-ND
别名:RN2713JE(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SMV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV
型号:
RN2510(TE85L,F)
仓库库存编号:
RN2510(TE85LF)CT-ND
别名:RN2510(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SMV
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV
型号:
RN2511(TE85L,F)
仓库库存编号:
RN2511(TE85LF)CT-ND
别名:RN2511(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
型号:
RN2603(TE85L,F)
仓库库存编号:
RN2603(TE85LF)CT-ND
别名:RN2603(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
型号:
RN2604(TE85L,F)
仓库库存编号:
RN2604(TE85LF)CT-ND
别名:RN2604(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
型号:
RN2967(TE85L,F)
仓库库存编号:
RN2967(TE85LF)CT-ND
别名:RN2967(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
型号:
RN2969(TE85L,F)
仓库库存编号:
RN2969(TE85LF)CT-ND
别名:RN2969(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.2W US6
详细描述:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
型号:
RN2971(TE85L,F)
仓库库存编号:
RN2971(TE85LF)CT-ND
别名:RN2971(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
型号:
RN4610(TE85L,F)
仓库库存编号:
RN4610(TE85LF)CT-ND
别名:RN4610(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.3W SM6
详细描述:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
型号:
RN4611(TE85L,F)
仓库库存编号:
RN4611(TE85LF)CT-ND
别名:RN4611(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Diodes Incorporated
TRANS PNP 65V 0.1A SOT23-3
详细描述:Bipolar (BJT) Transistor PNP 65V 100mA 200MHz 300mW Surface Mount SOT-23-3
型号:
BC856B-7-F
仓库库存编号:
BC856B-7FDICT-ND
别名:BC856B-7-FDICT
BC856B-7-FDICT-ND
BC856B-7FDICT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 0.1W SSM
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM
型号:
RN2102,LF(CT
仓库库存编号:
RN2102LF(CTCT-ND
别名:RN2102(T5LFT)CT
RN2102(T5LFT)CT-ND
RN2102LF(CTCT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Micro Commercial Co
TRANS PNP 65V 0.1A SOT-23
详细描述:Bipolar (BJT) Transistor PNP 65V 100mA 200MHz 310mW Surface Mount SOT-23
型号:
BC856B-TP
仓库库存编号:
BC856B-TPMSCT-ND
别名:BC856B-TPMSCT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Fairchild/ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
型号:
FJN4303RTA
仓库库存编号:
FJN4303RTACT-ND
别名:FJN4303RTACT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Fairchild/ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
型号:
FJN4301RTA
仓库库存编号:
FJN4301RTACT-ND
别名:FJN4301RTACT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT23-3
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SOT-23-3
型号:
DDTB123EC-7-F
仓库库存编号:
DDTB123EC-7-FDICT-ND
别名:DDTB123EC-7-FDICT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Fairchild/ON Semiconductor
TRANS PNP 60V 0.6A TO92
详细描述:Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92-3
型号:
KSP2907ATF
仓库库存编号:
KSP2907ATFCT-ND
别名:KSP2907ATFCT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Fairchild/ON Semiconductor
TRANS NPN 350V 0.5A TO-92
详细描述:Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3
型号:
2N6517CTA
仓库库存编号:
2N6517CTACT-ND
别名:2N6517CTACT
规格:频率 - 跃迁 200MHz,
无铅
搜索
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 0.1W USM
详细描述:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM
型号:
RN2308(TE85L,F)
仓库库存编号:
RN2308(TE85LF)CT-ND
别名:RN2308(TE85LF)CT
规格:频率 - 跃迁 200MHz,
无铅
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