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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2908FE(TE85L,F)
  仓库库存编号：RN2908FE(TE85LF)CT-ND
  别名：RN2908FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2909FE(TE85L,F)
  仓库库存编号：RN2909FE(TE85LF)CT-ND
  别名：RN2909FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2709JE(TE85L,F)
  仓库库存编号：RN2709JE(TE85LF)CT-ND
  别名：RN2709JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2711JE(TE85L,F)
  仓库库存编号：RN2711JE(TE85LF)CT-ND
  别名：RN2711JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2712JE(TE85L,F)
  仓库库存编号：RN2712JE(TE85LF)CT-ND
  别名：RN2712JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2713JE(TE85L,F)
  仓库库存编号：RN2713JE(TE85LF)CT-ND
  别名：RN2713JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS RF NPN 12V 1MHZ SSM
  详细描述：RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM
  
  型号：2SC5086-Y,LF
  仓库库存编号：2SC5086-YLFCT-ND
  别名：2SC5086-Y(T5LFT)CT
  2SC5086-Y(T5LFT)CT-ND
  2SC5086-YLFCT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS RF NPN 12V 1MHZ SSM
  详细描述：RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM
  
  型号：2SC5066-Y,LF
  仓库库存编号：2SC5066-YLFCT-ND
  别名：2SC5066-Y(T5LFT)CT
  2SC5066-Y(T5LFT)CT-ND
  2SC5066-YLFCT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN 50V 0.15A ES6
  详细描述：Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
  
  型号：HN1C01FE-Y,LF
  仓库库存编号：HN1C01FE-YLFCT-ND
  别名：HN1C01FE-Y(T5LFTCT
  HN1C01FE-Y(T5LFTCT-ND
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP 50V 0.15A ES6
  详细描述：Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
  
  型号：HN1B04FE-GR,LF
  仓库库存编号：HN1B04FE-GRLFCT-ND
  别名：HN1B04FE-GR(5LFTCT
  HN1B04FE-GR(5LFTCT-ND
  HN1B04FE-GRLF(TCT
  HN1B04FE-GRLF(TCT-ND
  HN1B04FE-GRLFCT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP 50V 0.15A ES6
  详细描述：Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
  
  型号：HN1A01FE-Y,LF
  仓库库存编号：HN1A01FE-YLFCT-ND
  别名：HN1A01FE-Y(T5LFTCT
  HN1A01FE-Y(T5LFTCT-ND
  HN1A01FE-YLF(BCT
  HN1A01FE-YLF(BCT-ND
  HN1A01FE-YLFCT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2906FE(TE85L,F)
  仓库库存编号：RN2906FE(TE85LF)CT-ND
  别名：RN2906FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1909FE(TE85L,F)
  仓库库存编号：RN1909FE(TE85LF)CT-ND
  别名：RN1909FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2911FE(TE85L,F)
  仓库库存编号：RN2911FE(TE85LF)CT-ND
  别名：RN2911FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2901FE(TE85L,F)
  仓库库存编号：RN2901FE(TE85LF)CT-ND
  别名：RN2901FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1910FE(T5L,F,T)
  仓库库存编号：RN1910FE(T5LFT)CT-ND
  别名：RN1910FE(T5LFT)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1963FE(TE85L,F)
  仓库库存编号：RN1963FE(TE85LF)CT-ND
  别名：RN1963FE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP 50V 0.15A ESV PLN
  详细描述：Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV
  
  型号：HN4B01JE(TE85L,F)
  仓库库存编号：HN4B01JE(TE85LF)CT-ND
  别名：HN4B01JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS RF NPN 30V 550MHZ SSM
  详细描述：RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SSM
  
  型号：2SC4915-Y,LF
  仓库库存编号：2SC4915-YLFCT-ND
  别名：2SC4915-YLFCT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANSISTOR NPN MM-USM
  详细描述：RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70
  
  型号：2SC5095-R(TE85L,F)
  仓库库存编号：2SC5095-R(TE85LF)CT-ND
  别名：2SC5095-R(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2704JE(TE85L,F)
  仓库库存编号：RN2704JE(TE85LF)CT-ND
  别名：RN2704JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• 
  
• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2705JE(TE85L,F)
  仓库库存编号：RN2705JE(TE85LF)CT-ND
  别名：RN2705JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• 
  
• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2701JE(TE85L,F)
  仓库库存编号：RN2701JE(TE85LF)CT-ND
  别名：RN2701JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• 
  
• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2710JE(TE85L,F)
  仓库库存编号：RN2710JE(TE85LF)CT-ND
  别名：RN2710JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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• 
  
• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ESV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ESV
  
  型号：RN2707JE(TE85L,F)
  仓库库存编号：RN2707JE(TE85LF)CT-ND
  别名：RN2707JE(TE85LF)CT
  
  规格：功率 - 最大值 100mW,
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