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• Panasonic Electronic Components
  TRANS PREBIAS NPN/PNP SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 125mW Surface Mount SSMini6-F2
  
  型号：UP04311G0L
  仓库库存编号：UP04311G0LCT-ND
  别名：UP04311G0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS NPN/PNP SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 125mW Surface Mount SSMini6-F2
  
  型号：UP04314G0L
  仓库库存编号：UP04314G0LCT-ND
  别名：UP04314G0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS NPN/PNP SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 125mW Surface Mount SSMini6-F2
  
  型号：UP0431NG0L
  仓库库存编号：UP0431NG0LCT-ND
  别名：UP0431NG0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS NPN/PNP SSMINI5
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 125mW Surface Mount SSMini5-F2
  
  型号：UP0338300L
  仓库库存编号：UP0338300LCT-ND
  别名：UP0338300LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS DUAL NPN SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 125mW Surface Mount SSMINI6-F1
  
  型号：UP0421500L
  仓库库存编号：UP0421500LCT-ND
  别名：UP0421500LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS DUAL NPN SSMINI5
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 125mW Surface Mount SSMini5-F2
  
  型号：UP0121M00L
  仓库库存编号：UP0121M00LCT-ND
  别名：UP0121M00LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS DUAL NPN SSMINI5
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 125mW Surface Mount SSMini5-F3
  
  型号：UP01213G0L
  仓库库存编号：UP01213G0LCT-ND
  别名：UP01213G0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS DUAL NPN SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 125mW Surface Mount SSMini6-F2
  
  型号：UP04211G0L
  仓库库存编号：UP04211G0LCT-ND
  别名：UP04211G0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS DUAL NPN SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 125mW Surface Mount SSMini6-F2
  
  型号：UP04213G0L
  仓库库存编号：UP04213G0LCT-ND
  别名：UP04213G0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS PREBIAS DUAL NPN SSMINI6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 125mW Surface Mount SSMini6-F2
  
  型号：UP04214G0L
  仓库库存编号：UP04214G0LCT-ND
  别名：UP04214G0LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.5W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 500mW Surface Mount US6
  
  型号：RN1962TE85LF
  仓库库存编号：RN1962TE85LFCT-ND
  别名：RN1962TE85LFCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS NPN 50VCEO 50MA SMINI-3
  详细描述：RF Transistor NPN 50V 50mA 250MHz 150mW Surface Mount SMini3-F2
  
  型号：2SC4562GRL
  仓库库存编号：2SC4562GRLCT-ND
  别名：2SC4562GRLCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS NPN/PNP 50V 0.5A MINI6
  详细描述：Bipolar (BJT) Transistor Array NPN, PNP 50V 500mA 200MHz 300mW Surface Mount MINI6-G1
  
  型号：XN0460200L
  仓库库存编号：XN0460200LCT-ND
  别名：XN0460200LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP 50V 0.15A US6-PLN
  详细描述：Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
  
  型号：HN1A01FU-GR,LF
  仓库库存编号：HN1A01FU-GRLFCT-ND
  别名：HN1A01FU-GRLFCT
  HN1A01FUGRLFTCT
  HN1A01FUGRLFTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• ON Semiconductor
  TRANS PREBIAS NPN/PNP SOT363
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
  
  型号：MUN5311DW1T1G
  仓库库存编号：MUN5311DW1T1GOSCT-ND
  别名：MUN5311DW1T1GOSCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• ON Semiconductor
  TRANS PREBIAS NPN/PNP SOT363
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
  
  型号：MUN5333DW1T1G
  仓库库存编号：MUN5333DW1T1GOSCT-ND
  别名：MUN5333DW1T1GOSCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2910FE,LF(CB
  仓库库存编号：RN2910FELF(CBCT-ND
  别名：RN2910FE(T5LFT)CT
  RN2910FE(T5LFT)CT-ND
  RN2910FELF(CBCT
  RN2910FELF(CTCT
  RN2910FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
  
  型号：RN4985,LF(CT
  仓库库存编号：RN4985LF(CTCT-ND
  别名：RN4985(T5LFT)CT
  RN4985(T5LFT)CT-ND
  RN4985LF(CBCT
  RN4985LF(CBCT-ND
  RN4985LF(CTCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1905FE,LF(CB
  仓库库存编号：RN1905FELF(CBCT-ND
  别名：RN1905FE(TE85LF)CT
  RN1905FE(TE85LF)CT-ND
  RN1905FELF(CBCT
  RN1905FELF(CTCT
  RN1905FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
  
  型号：RN4987FE,LF(CB
  仓库库存编号：RN4987FELF(CBCT-ND
  别名：RN4987FE(T5LFT)CT
  RN4987FE(T5LFT)CT-ND
  RN4987FELF(CBCT
  RN4987FELF(CTCT
  RN4987FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN4983FE,LF(CB
  仓库库存编号：RN4983FELF(CBCT-ND
  别名：RN4983FE(T5LFT)CT
  RN4983FE(T5LFT)CT-ND
  RN4983FELF(CBCT
  RN4983FELF(CTCT
  RN4983FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
  
  型号：RN4981FE,LF(CB
  仓库库存编号：RN4981FELF(CBCT-ND
  别名：RN4981FE(TE85LF)CT
  RN4981FE(TE85LF)CT-ND
  RN4981FELF(CBCT
  RN4981FELF(CTCT
  RN4981FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN4982FE,LF(CB
  仓库库存编号：RN4982FELF(CBCT-ND
  别名：RN4982FE(T5LFT)CT
  RN4982FE(T5LFT)CT-ND
  RN4982FELF(CBCT
  RN4982FELF(CTCT
  RN4982FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
  
  型号：RN1903,LF(CT
  仓库库存编号：RN1903LF(CTCT-ND
  别名：RN1903(T5LFT)CT
  RN1903(T5LFT)CT-ND
  RN1903LF(CTCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN4984FE,LF(CB
  仓库库存编号：RN4984FELF(CBCT-ND
  别名：RN4984FE(T5LFT)CT
  RN4984FE(T5LFT)CT-ND
  RN4984FELF(CBCT
  RN4984FELF(CTCT
  RN4984FELF(CTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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