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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
  
  型号：RN4986(T5L,F,T)
  仓库库存编号：RN4986(T5LFT)CT-ND
  别名：RN4986(T5LFT)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
  
  型号：RN2905T5LFT
  仓库库存编号：RN2905T5LFTCT-ND
  别名：RN2905T5LFTCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN 50V 0.15A ES6
  详细描述：Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
  
  型号：HN1C01FE-Y,LF
  仓库库存编号：HN1C01FE-YLFCT-ND
  别名：HN1C01FE-Y(T5LFTCT
  HN1C01FE-Y(T5LFTCT-ND
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP 50V 0.15A ES6
  详细描述：Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
  
  型号：HN1B04FE-GR,LF
  仓库库存编号：HN1B04FE-GRLFCT-ND
  别名：HN1B04FE-GR(5LFTCT
  HN1B04FE-GR(5LFTCT-ND
  HN1B04FE-GRLF(TCT
  HN1B04FE-GRLF(TCT-ND
  HN1B04FE-GRLFCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Diodes Incorporated
  TRANS 2NPN PREBIAS 0.2W SOT363
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363
  
  型号：DDC143ZU-7-F
  仓库库存编号：DDC143ZU-7-FDICT-ND
  别名：DDC143ZU-7-FDICT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
  
  型号：RN1964TE85LF
  仓库库存编号：RN1964TE85LFCT-ND
  别名：RN1964TE85LFCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP 50V 0.15A ES6
  详细描述：Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
  
  型号：HN1A01FE-Y,LF
  仓库库存编号：HN1A01FE-YLFCT-ND
  别名：HN1A01FE-Y(T5LFTCT
  HN1A01FE-Y(T5LFTCT-ND
  HN1A01FE-YLF(BCT
  HN1A01FE-YLF(BCT-ND
  HN1A01FE-YLFCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN 50V 0.15A SM6
  详细描述：Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW Surface Mount SM6
  
  型号：HN1C01F-GR(TE85L,F
  仓库库存编号：HN1C01F-GR(TE85LFCT-ND
  别名：HN1C01F-GR(TE85LF)CT
  HN1C01F-GR(TE85LF)CT-ND
  HN1C01F-GR(TE85LFCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2906FE(TE85L,F)
  仓库库存编号：RN2906FE(TE85LF)CT-ND
  别名：RN2906FE(TE85LF)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1909FE(TE85L,F)
  仓库库存编号：RN1909FE(TE85LF)CT-ND
  别名：RN1909FE(TE85LF)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2911FE(TE85L,F)
  仓库库存编号：RN2911FE(TE85LF)CT-ND
  别名：RN2911FE(TE85LF)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
• 无铅
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
  
  型号：RN2901FE(TE85L,F)
  仓库库存编号：RN2901FE(TE85LF)CT-ND
  别名：RN2901FE(TE85LF)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
  
  型号：RN1908(T5L,F,T)
  仓库库存编号：RN1908(T5LFT)CT-ND
  别名：RN1908(T5LFT)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
• 无铅
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
  
  型号：RN1905(T5L,F,T)
  仓库库存编号：RN1905(T5LFT)CT-ND
  别名：RN1905(T5LFT)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.2W US6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
  
  型号：RN1909(T5L,F,T)
  仓库库存编号：RN1909(T5LFT)CT-ND
  别名：RN1909(T5LFT)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP 50V 0.15A US6
  详细描述：Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
  
  型号：HN1B01FU-Y(L,F,T)
  仓库库存编号：HN1B01FU-Y(LFT)CT-ND
  别名：HN1B01FU-Y(LFT)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1910FE(T5L,F,T)
  仓库库存编号：RN1910FE(T5LFT)CT-ND
  别名：RN1910FE(T5LFT)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
• 无铅
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• Toshiba Semiconductor and Storage
  TRANS 2NPN 50V 0.15A US6
  详细描述：Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
  
  型号：HN1C01FU-Y(T5L,F,T
  仓库库存编号：HN1C01FU-Y(T5LFTCT-ND
  别名：HN1C01FU-Y(T5LFTCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS NPN/PNP 50V 0.15A US6
  详细描述：Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW Surface Mount US6
  
  型号：HN1B04FU-Y(T5L,F,T
  仓库库存编号：HN1B04FU-Y(T5LFTCT-ND
  别名：HN1B04FU-Y(T5LFTCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
• 无铅
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• Panasonic Electronic Components
  TRANS 2PNP 50V 0.1A MINI5
  详细描述：Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 100mA 150MHz 300mW Surface Mount Mini5-G3-B
  
  型号：DMA202010R
  仓库库存编号：DMA202010RCT-ND
  别名：DMA202010RCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2PNP PREBIAS 0.3W SMV
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV
  
  型号：RN2505TE85LF
  仓库库存编号：RN2505TE85LFCT-ND
  别名：RN2505TE85LFCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Toshiba Semiconductor and Storage
  TRANS 2NPN PREBIAS 0.1W ES6
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
  
  型号：RN1963FE(TE85L,F)
  仓库库存编号：RN1963FE(TE85LF)CT-ND
  别名：RN1963FE(TE85LF)CT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Panasonic Electronic Components
  TRANS 2NPN 50V 0.1A SMINI6
  详细描述：Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 150MHz 150mW Surface Mount SMINI6-G1
  
  型号：XP0450100L
  仓库库存编号：XP0450100LCT-ND
  别名：XP0450100LCT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Diodes Incorporated
  TRANS 2PNP PREBIAS 0.2W SOT363
  详细描述：Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363
  
  型号：DDA114YU-7
  仓库库存编号：DDA114YUDICT-ND
  别名：DDA114YU7
  DDA114YUDICT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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• Diodes Incorporated
  TRANS NPN/PNP PREBIAS 0.3W SC74R
  详细描述：Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SC-74R
  
  型号：DCX124EK-7-F
  仓库库存编号：DCX124EK-FDICT-ND
  别名：DCX124EK-FCT
  DCX124EK-FCT-ND
  DCX124EK-FDICT
  
  规格：电压 - 集射极击穿（最大值） 50V,
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